Roozbeh Anvari

Education: 

Ph.D, University of Western Australia,

ultrafast dynamics, sensors, memory devices, quantum computing

Publications:

• R Anvari, W Wang. “Role of sulfur vacancy in the switching mechanism of MoS2-based memristors”  J. Appl. Phys. 135, 174304 (2024)
• A Seidl, R Anvari, MM Dignam, P Richter, T Seyller, H Schneider, M Helm. “Pump-induced terahertz anisotropy in bilayer graphene.” Physical Review B 105 (8), 085404, (2022)
• R Anvari, E Zaremba, MM Dignam. “Impact of nitrogen doping on the linear and nonlinear terahertz response of graphene.” Phys. Rev. B 104 (15), 155402, (2021)
• R Anvari, D Spagnoli, GA Umana-Membreno, G Parish, B Nener. “Theoretical study of the influence of surface effects on GaN-based chemical sensors.” Applied Surface Science 452, 75-86, (2018)
• R Anvari, D Spagnoli, GA Umana-Membreno, G Parish, B Nener. “Effect of pH and structure on the channel conductivity of AlGaN/GaN heterostructure based sensors.” Sensors and Actuators B: Chemical 269, 54-61, (2018)
• R Anvari, D Spagnoli, G Parish, B Nener. “Density Functional Theory Simulations of Water Adsorption and Activation on the (−201) β‐Ga2O3 Surface.” Chemistry–A European Journal 24 (29), 7445-7455, (2018)

Presentations:

• A Seidl, R Anvari, MM Dignam, P Richter, T Seyller, H Schneider, M Helm. “Anisotropic Terahertz Pump-Probe Response of Bilayer Graphene.” European Quantum Electronics Conference, 2021
• R Anvari, MM Dignam. “Carrier dynamics in nitrogen-doped graphene under THz radiation.”
  Conference on Lasers and Electro-Optics Europe & European Quantum
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• R Anvari, M Myers, GA Umana-Membreno, M Baker, D Spagnoli, G Parish. “Charging mechanism of AlGaN/GaN open-gate pH sensor and electrolyte interface.”
  2014 Conference on Optoelectronic and Microelectronic Materials & Devices